FECBIS-CP
This Power IC Burn-in Tester is specialized in high voltage and high peak current.
| Test Device | 3 Slot per Zone |
|---|---|
| Parallelism | Max 2 |
| Test Rate | 6 |
| Current | 1 |
| Dimension (W x D x H, mm) |
|
| Operating System | Up to 64 |
UNI650
Prior to the Back End Process of DRAM memory semiconductors,
wafer tester check the wafer’s electrical performance Specifically,
speed, data Read/Write/Erase, and repair functions.
| Test Device | DRAM, PCRAM |
|---|---|
| Parallelism | 3,072 |
| Test Rate | 222MHz |
| Current | 1A(3V) |
| Dimension (W x D x H, mm) |
Main Frame : 1,500 x 1,000 x 1,900
Test Head: 940 x 1,490 x 984 |
| Operating System | LInux |
UNI610
Prior to the post-processing of NAND Flash memory semiconductors,
wafer tester check the wafer’s electrical performance
Specifically, speed, data Read/Write/Erase, and repair functions.
| Test Device | NAND Flash |
|---|---|
| Parallelism | 1,024 |
| Test Rate | 50MHz |
| Current | 400mA(5V) |
| Dimension (W x D x H, mm) |
Main Frame : 1,000 x 800 x 1,688
Test Head : 600 x 750 x 800 |
| Operating System | Linux |
F-1
This Burn-in Tester has high end features upgarded from FECBIS-1.
| Test Device | Zone per Slot |
|---|---|
| Parallelism | Max 32(user setting) |
| Test Rate | 16 slot per Temp zone |
| Current | 2 (Ambient to 150’C) |
| Dimension (W x D x H, mm) |
Parallel, Serial |
| Operating System | Up to 256 (512 option) |
FECBIS-1
This Burn-in tester has test channels with low noise, multi VIH level, high frequency ( SERDES Chip, TCON) and high peak current.
| Test Device | Zone per Slot |
|---|---|
| Parallelism | Max 24(user setting) |
| Test Rate | 8slot per Temp zone |
| Current | 3 (-40’C to 150’C) |
| Dimension (W x D x H, mm) |
Parallel, Serial |
| Operating System | Up to 256 (512 option) |
